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| LS301 Linear Integrated Systems LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN LOW OUTPUT CAPACITANCE TIGHT VBE MATCHING HIGH fT hFE 2000 @ 1.0A TYP. COBO 2.0pF |VBE1-VBE2| = 0.2mV TYP. 100MHz C1 C2 E1 3 5 E2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25C (unless otherwise noted) Collector Current 5mA IC Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor B1 2 6 B2 -65 to +200C +150C B1 ONE SIDE 250mW 2.3mW/C BOTH SIDES 500mW 4.3mW/C E1 E2 B2 1 C1 7 C2 26 X 29 MILS BOTTOM VIEW ELECTRICAL CHARACTERISTICS @ 25C (unless otherwise noted) SYMBOL CHARACTERISTICS LS301 LS302 Collector to Base Voltage 18 35 BVCBO BVCEO BVEBO BVCCO hFE hFE hFE ICBO IEBO COBO CC1C2 IC1C2 fT NF Collector to Emitter Voltage Emitter-Base Breakdown Voltage Collector to Collector Voltage DC Current Gain DC Current Gain DC Current Gain Collector Cutoff Current Emitter Cutoff Current Output Capacitance Collector to Collector Capacitance Collector to Collector Leakage Current Current Gain Bandwidth Product Narrow Band Noise Figure 18 6.2 100 2000 2000 2000 0.5 100 0.2 2 2 0.5 100 3 35 6.2 100 1000 1000 1000 0.5 100 0.2 2 2 0.5 100 3 LS303 10 10 6.2 100 2000 2000 2000 0.5 100 0.2 2 2 0.5 100 3 MIN. MIN. MIN. MIN. TYP. MIN. TYP. MAX. MAX. MAX. MAX. MAX. MAX. MIN. MAX. UNITS V V V V CONDITIONS IC = 10A IE = 0 IC = 10A IE = 10A IC = 10A IC = 1A IC = 10A IC = 500A IB = 0 IC = 0 NOTE 2 IE = 0 VCE = 5V VCE = 5V VCE = 5V IB = 0.1mA VCB = NOTE 3 VEB = 3V VCB = 1V VCE(SAT) Collector Saturation Voltage V pA pA pF pF nA MHz dB IC = 1mA IE = 0 IE = 0 IE = 0 VCC = 0 VCC = NOTE 4 IC = 200A IC = 10A BW = 200Hz f = 1KHz VCE = 5V VCE = 3V RG = 10 K Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 * TEL: (510) 490-9160 * FAX: (510) 353-0261 MATCHING CHARACTERISTICS SYMBOL CHARACTERISTICS Base Emitter Voltage Differential |VBE1-VBE2| |(VBE1-VBE2)|/C |IB1- IB2| hFE1/hFE2 Base Emitter Voltage Differential Change with Temperature Base Current Differential DC Current Gain Differential LS301 0.2 1 1 5 0.5 1 5 LS302 0.2 1 1 5 1 5 5 LS303 0.2 1 1 5 0.5 1.5 5 UNITS TYP. mV MAX. mV TYP. MAX. TYP. MAX. TYP. V/C V/C nA nA % CONDITIONS IC = 10 A IC = 10 A T = -55C IC = 10A IC = 10A IC = 10A to VCE = 5V VCE = 5V +125C VCE = 1V VCE = 5V VCE = 5V TO-71 Six Lead 0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115 TO-78 0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 MIN. 0.500 SEATING PLANE 0.200 0.100 2 34 1 5 8 76 P-DIP 0.320 (8.13) 0.290 (7.37) 0.405 (10.29) MAX. C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.016 0.019 DIM. A 0.016 0.021 DIM. B 0.029 0.045 6 LEADS 0.019 DIA. 0.016 0.100 0.500 MIN. 0.050 234 1 8 5 6 7 SOIC 0.150 (3.81) 0.158 (4.01) 0.100 45 0.046 0.036 45 0.048 0.028 0.028 0.034 0.188 (4.78) 0.197 (5.00) C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.228 (5.79) 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 Amps. 3. For LS301 & LS302: VCB= 10V; for LS303: VCB = 5V. 4. For LS301 & LS302: VCC= 80V; for LS303: VCC = 20V. Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 * TEL: (510) 490-9160 * FAX: (510) 353-0261 |
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